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BSL316C
OptiMOSTM 2 + OptiMOSTM-P 2 Small Signal Transistor
Product Summary Features * Complementary P + N channel * Enhancement mode * Logic level (4.5V rated) * Avalanche rated * Qualified according to AEC Q101 * 100% lead-free; RoHS compliant PG-TSOP6
6 5
P V DS R DS(on),max V GS=10 V V GS=4.5 V ID -30 150 270 -1.5
N 30 160 280 1.4 A V m
4
1
2
3
Type BSL316C
Package PG-TSOP-6
Tape and Reel Information L6327: 3000 pcs / reel
1)
Marking sPJ
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 C, unless otherwise specified Parameter
Symbol Conditions P
Value N 1.4 1.1 5.6 3.7 20
Unit
Continuous drain current
ID
T A=25 C T A=70 C
-1.5 -1.2 -6.0 11
A
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation1) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1
1)
I D,pulse E AS V GS P tot T j, T stg
T A=25 C P: I D=-1.5 A, N: I D=1.4 A, R GS=25
mJ V W C
T A=25 C
0.5 -55 ... 150
JESD22-A114-HBM T solder
0 (<250V) 260 55/150/56 C
Remark: only one of both transistors active
Rev. 2.1
page 1
2009-02-10
BSL316C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction ambient1) P N R thJA
2)
Values typ. max.
Unit
minimal footprint
-
-
250
K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltag P V (BR)DSS V GS=0 V, I D=-250 A N Gate threshold voltage P V GS(th) N Zero gate voltage drain current P I DSS N P N Gate-source leakage current P N Drain-source on-state resistance I GSS V GS=0 V, I D=250 A V DS=V GS, I D=-11 A V DS=V GS, I D=3.7 A V DS=-30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=25 C V DS=-30 V, V GS=0 V, T j=150 C V DS=30 V, V GS=0 V, T j=150 C V GS=20 V, V DS=0 V V GS=-4.5 V, I D=-1.1 A V GS=4.5 V, I D=-1.1 A V GS=-10 V, I D=-1.5 A V GS=10 V, I D=1.4 A |V DS|>2|I D|R DS(on)max, I D=-1.18 A |V DS|>2|I D|R DS(on)max, I D=1.1 A 30 -2 1.2 -1.5 1.6 177 191 113 119 2.7 -30 -1 2 -1 1 -100 100 100 270 280 150 160 S nA m A V
P R DS(on) N P N
Transconductance
P g fs N
-
2.3
-
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB
2)
Rev. 2.1
page 2
2009-02-10
BSL316C
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance P Crss N Turn-on delay time P t d(on) N Rise time P tr N Turn-off delay time P t d(off) N Fall time P tf N Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge Gate to drain charge Switching charge Gate plateau voltage P Q gs Q gd Qg V plateau N Q gs Q gd Qg V plateau V DD=15 V, I D=1.4 A, V GS=0 to 5 V V DD=-15 V, I D=-1.5 A, V GS=0 to -5 V -0.6 -1.2 -2.4 -2.9 0.3 0.2 0.6 3.4 nC P: V DD=-15 V, V GS=-10 V, R G=6 , I D=-1.5 A N: V DD=15 V, V GS=10 V, R G=6 , I D=1.4 A V GS=0 V, P: V DS=-15 V, N: V DS= 15 V, f =1 MHz 212 71 69 26 56 5 5.0 3.4 6.5 2.3 14.3 5.8 7.5 1.0 282 94 91 35 84 7 ns pF Values typ. max. Unit
Rev. 2.1
page 3
2009-02-10
BSL316C
Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current P IS N Diode pulse current P I S,pulse N Diode forward voltage P V SD V GS=0 V, I F=-1.5 A, T j=25 C V GS=0 V, I F=1.4 A, T j=25 C T C=25 C -0.8 -0.5 0.5 -6.0 5.6 -1.1 V A Values typ. max. Unit
N Reverse recovery time P t rr N Reverse recovery charge P Q rr N
-
0.86 8.2 9.1 2.1 2.6
1.1 nC ns
V R=15 V, I F=I S, di F/dt =100 A/s
-
Rev. 2.1
page 4
2009-02-10
BSL316C
1 Power dissipation (P) P tot=f(T A) 2 Power dissipation (N) P tot=f(T A)
0.6
0.6
0.5
0.5
0.4
0.4
P tot [W]
P tot [W]
0.3
0.3
0.2
0.2
0.1
0.1
0 0 40 80 120 160
0 0 40 80 120 160
T A [C]
T A [C]
3 Drain current (P) I D=f(T A) parameter: V GS-10 V
1.6
4 Drain current (N) I D=f(T A) parameter: V GS10 V
1.6
1.4
1.4
1.2
1.2
1
1
-I D [A]
0.8
I D [A]
0 40 80 120 160
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0 0 40 80 120 160
T A [C]
T A [C]
Rev. 2.1
page 5
2009-02-10
BSL316C
5 Safe operating area (P) I D=f(V DS); T A=25 C; D =0 parameter: t p
101
1 s 10 s 100 s 1 ms 100 s 10 s
6 Safe operating area (N) I D=f(V DS); T A=25 C; D =0 parameter: t p
101
1 s
100
10 ms
100
10 ms
1 ms
-I D [A]
DC
I D [A]
DC
10-1
10-1
10-2 10
-1
10-2 10
0
10
1
10
2
10-1
100
101
102
-V DS [V]
V DS [V]
7 Max. transient thermal impedance (P) Z thJA=f(t p) parameter: D =t p/T
103
8 Max. transient thermal impedance (N) Z thJA=f(t p) parameter: D =t p/T
103
102
0.5
0.5
102
Z thJA [K/W]
0.2 0.1 0.05
Z thJA [K/W]
0.2 0.1
0.05
10
1
0.02 0.01
10
1
0.02 0.01 single pulse
single pulse
100 10
-5
100 10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
101
102
t p [s]
t p [s]
Rev. 2.1
page 6
2009-02-10
BSL316C
9 Typ. output characteristics (P) I D=f(V DS); T j=25 C parameter: V GS
6
-10 V -5 V -4.5 V -4 V
10 Typ. output characteristics (N) I D=f(V DS); T j=25 C parameter: V GS
6
10 V 5V 4.5 V
5
5
4
-3.5 V
4
-I D [A]
3
I D [A]
4V
3
2
-3 V
2
3.5 V
1
-2.5 V
1
3V
0 0 1 2 3
0 0 1 2
2.5 V
3
-V DS [V]
V DS [V]
11 Typ. drain-source on resistance (P) R DS(on)=f(I D); T j=25 C parameter: V GS
400
12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 C parameter: V GS
400
350
-3 V -3.5 V
350
3.5 V
300
300
4V -4 V
R DS(on) [m]
R DS(on) [m]
250
250
4.5 V
200
-4.5 V -5 V
200
5V
150
-10 V
150
10 V
100
100
50
50
0 0 1 2 3 4 5
0 0 1 2 3 4 5
-I D [A]
I D [A]
Rev. 2.1
page 7
2009-02-10
BSL316C
13 Typ. transfer characteristics (P) I D=f(V GS); |V DS |>2 | ID| RDS(on)max parameter: T j
6
14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j
6
5
25 C
5
25 C
150 C
4
4
-I D [A]
I D [A]
150 C
3
3
2
2
1
1
0 0 1 2 3 4 5
0 0 1 2 3 4 5
-V GS [V]
V GS [V]
15 Drain-source on-state resistance (P) R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V
16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=1.4 A; V GS=10 V
300
300
250
250
200
200
R DS(on) [m]
150
98%
R DS(on) [m]
98%
150
typ
100
typ
100
50
50
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
Rev. 2.1
page 8
2009-02-10
BSL316C
17 Typ. gate threshold voltage (P) V GS(th)=f(T j); V GS=V DS; I D=-11 A 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=3.7 A
2.8
2.8
2.4
2.4
max
2
min
2
-V GS(th) [V]
V GS(th) [V]
1.6
typ
1.6
typ
1.2
1.2
min
0.8
max
0.8
0.4
0.4
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
19 Typ. capacitances (P) C =f(V DS); V GS=0 V; f =1 MHz
20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz
103
102
Ciss
Coss Ciss
C [pF]
102
Coss
C [pF]
101
Crss Crss
101 0 10 20 30
100 0 10 20 30
-V DS [V]
V DS [V]
Rev. 2.1
page 9
2009-02-10
BSL316C
21 Forward characteristics of reverse diode (P) I F=f(V SD) parameter: T j
101
22 Forward characteristics of reverse diode (N) I F=f(V SD) parameter: T j
101
100
150 C 25 C
100
150 C 25 C
-I F [A]
10-1
25 C, 98%
I F [A]
10-1
98%, 150C
150 C, 98%
10-2 0 0.5 1 1.5 2
10-2 0 0.5
98%, 25 C
1
1.5
2
-V SD [V]
V SD [V]
23 Avalanche characteristics (P) I AS=f(t AV); R GS=25 parameter: T j(start)
10
24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 parameter: T j(start)
10
-I AV [A]
1
125 C 100 C
25 C
I AV [A]
1
125 C
100 C
25 C
0.1 1 10 100 1000
0.1 1 10 100 1000
t AV [s]
t AV [s]
Rev. 2.1
page 10
2009-02-10
BSL316C
25 Typ. gate charge (P) V GS=f(Q gate); I D=-1.5 A pulsed parameter: V DD
10
26 Typ. gate charge (N) V GS=f(Q gate); I D=1.4 A pulsed parameter: V DD
10
8
-6 V -15 V -24 V
8
6V 15 V 24 V
6
6
-V GS [V]
4
V GS [V]
4 2 2 0 0 1 2 3 4 5 0 0 0.2 0.4 0.6 0.8 1 1.2
-Q gate [nC]
Q gate [nC]
27 Drain-source breakdown voltage (P) V BR(DSS)=f(T j); I D=-250 A
28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=250 A
36
36
34
34
32
32
-V BR(DSS) [V]
30
V BR(DSS) [V]
-60 -20 20 60 100 140 180
30
28
28
26
26
24
24 -60 -20 20 60 100 140 180
T j [C]
T j [C]
Rev. 2.1
page 11
2009-02-10
BSL316C
Package Outline:
TSOP6
2.9 0.2 (2.25) (0.35)
B
1.1 MAX. 0.1 MAX.
0.25 0.1 10 MAX.
2.5 0.1
1
2
3
0.35 +0.1 -0.05 0.95 1.9
0.2
M
B 6x
0.15 +0.1 -0.06 0.2
M
A
A
GPX09300
Footprint:
Packaging:
0.5
4
1.9 2.9
0.2
0.95 Remark: Wave soldering possible dep. Pin 1 marking on customers process conditions
HLG09283
3.15
2.7 8
1.15
CPWG5899
Dimensions in mm
Rev. 2.1
page 12
1.6 0.1
2009-02-10
6
5
4
10 MAX.
BSL316C
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1
page 13
2009-02-10

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